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APTGF100DA120TG
Boost chopper NPT IGBT Power Module
VBUS VBUS SENSE NTC2
VCES = 1200V IC = 100A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant Max ratings 1200 135 100 300 20 568 200A @ 1200V Unit V A V W
July, 2006 1-6 APTGF100DA120TG - Rev 3
CR1
OUT Q2 G2
E2
0/VBU S
NTC1
G2 E2
OUT
VBUS
0/VBUS
OUT
VBUS SENSE
E2 G2
NT C2 NT C1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF100DA120TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V Tj = 25C VCE = 1200V Tj = 125C Tj = 25C VGE = 15V IC = 100A Tj = 125C VGE = VCE, IC = 2 mA VGE = 20 V, VCE = 0V Min Typ Max 350 600 3.7 6.5 150 Unit A V V nA
3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 100A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 100A R G = 2.5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 100A R G = 2.5 VGE = 15V Tj = 125C VBus = 600V IC = 100A Tj = 125C R G = 2.5
Min
Typ 6900 660 440 660 70 400 35 65 320 30 35 65 360 40 13.9 6.1
Max
Unit pF
nC
ns
ns
mJ
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 70C
Min 1200
Typ
Max 350 600
Unit V A A
IF = 120A Reverse Recovery Time Reverse Recovery Charge IF = 120A VR = 800V di/dt =400A/s
nC
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2-6
APTGF100DA120TG - Rev 3
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
1.8 400 470 2400 8000
ns
July, 2006
IF = 120A IF = 240A
120 2.0 2.3
2.5 V
APTGF100DA120TG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.22 0.46 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25 T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
SP4 Package outline (dimensions in mm)
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGF100DA120TG - Rev 3
July, 2006
APTGF100DA120TG
Typical Performance Curve
400 Ic, Collector Current (A) 320 240 160 80 0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 8
TJ=125C
Output characteristics (VGE=15V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
100
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
80 60 40
TJ=125C
20 0 0 1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge
4
600
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0 100 200 300 400
IC = 100A TJ = 25C VCE=600V
500 400 300 200 100 0 0
250s Pulse Test < 0.5% Duty cycle
VCE =240V
TJ=25C
VCE=960V
TJ=125C TJ=25C
4 8 12 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
16
500
600
700
Gate Charge (nC) On state Voltage vs Junction Temperature
250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=200A Ic=100A
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
VCE, Collector to Emitter Voltage (V)
6 5 4 3 2 1 0
Ic=200A
Ic=100A
Ic=50A
Ic=50A
10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
16
-50
-25 0 25 50 75 100 TJ, Junction Temperature (C)
125
Collector to Emitter Breakdown Voltage (Normalized)
1.20 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50
Ic, DC Collector Current (A)
180 160 140 100 80 60 40 20 0 120
DC Collector Current vs Case Temperature
1.15
-25 0 25 50 75 100 TJ, Junction Temperature (C)
125
-50
-25
0 25 50 75 100 125 150 TC , Case Temperature (C)
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4-6
APTGF100DA120TG - Rev 3
July, 2006
APTGF100DA120TG
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns)
VCE = 600V R G = 2.5 VGE = 15V
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
45
400
VGE=15V, TJ=125C
40
350
35
300
VGE=15V, TJ=25C
30
250
VCE = 600V RG = 2.5
25 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current
200 0 50 100 150 200 250
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
180 VCE = 600V RG = 2.5
tf, Fall Time (ns)
50
TJ = 125C
tr, Rise Time (ns)
140
40
100
VGE=15V
60
30
T J = 25C VCE = 600V, VGE = 15V, RG = 2.5
20 0 50 100 150 200 ICE, Collector to Emitter Current (A) 250
20 0 50 100 150 200 ICE, Collector to Emitter Current (A) 250
Eon, Turn-On Energy Loss (mJ)
48 40 32 24 16 8 0 0
VCE = 600V RG = 2.5
TJ=125C, VGE=15V
Eoff, Turn-off Energy Loss (mJ)
56
Turn-On Energy Loss vs Collector Current
Turn-Off Energy Loss vs Collector Current
16
VCE = 600V VGE = 15V R G = 2.5 TJ = 125C
12
8
T J = 25C
TJ=25C, VGE=15V
4
0 0 50 100 150 200 250 ICE, Collector to Emitter Current (A)
50 100 150 200 ICE, Collector to Emitter Current (A)
250
Switching Energy Losses (mJ)
32 28 24 20 16 12 8 4 0 0
VCE = 600V VGE = 15V TJ= 125C
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 36
Eon, 100A
16
Switching Energy Losses vs Junction Temp.
VCE = 600V VGE = 15V RG = 2.5 Eon, 100A
12
Eon, 50A
Eoff, 100A
4
Eon, 50A Eoff, 50A
Eoff, 50A
0 5 10 15 20 Gate Resistance (Ohms) 25 0 25 50 75 100 TJ, Junction Temperature (C) 125
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APTGF100DA120TG - Rev 3
July, 2006
Eoff, 100A
8
APTGF100DA120TG
Capacitance vs Collector to Emitter Voltage 10000
Cies
Reverse Bias Safe Operating Area 250 IC, Collector Current (A) 200 150 100 50 0
C, Capacitance (pF)
1000
Coes
Cres
100 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50
0
400 800 1200 VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) 0.2 0.15 0.5 0.1 0.05 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7
0.05 0 0.00001
Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current 120 100 80 60 40 20 0 10 30 50 70 90 IC, Collector Current (A) 110
Hard switching ZCS ZVS VCE = 600V D = 50% RG = 2.5 TJ = 125C TC = 75C
Fmax, Operating Frequency (kHz)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF100DA120TG - Rev 3
July, 2006

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